Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1162
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SA715
APPLICATIONS
・For
low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
35
35
5
2.5
3
0.75
W
UNIT
V
V
V
A
A
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
