INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC1970
DESCRIPTION
·High
Power Gain-
: G
pe
≥
9.2dB,f= 175MHz, P
O
= 1W; V
CC
= 13.5V
·High
Reliability
APPLICATIONS
·Designed
for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage R
BE
=
∞
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
@T
C
=25℃
P
C
Collector Power Dissipation
@T
a
=25℃
T
j
T
stg
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
40
UNIT
V
17
4
V
V
0.6
5
W
1
150
-55~150
℃
℃
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
125
25
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
