INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC2073
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
:V
(BR)CEO
= 150V(Min)
·Wide
Area of Safe Operation
·Complement
to Type 2SA940
APPLICATIONS
·Power
amplifier applications.
·Vertical
output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
VALUE
150
150
5
1.5
0.5
1.5
UNIT
V
V
V
A
A
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
25
150
-55~150
W
℃
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
