Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
collector breakdown voltage
: V
CEO
=400V(Min)
・Excellent
switching time
: t
r
=1.0μs(Max.)
: t
f
=1.0μs(Max.@I
C
=4A
APPLICATIONS
・Switching
regulator and high voltage
switching applications
・High
speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2553
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
5
1
1.5
W
UNIT
V
V
V
A
A
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
