INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2736
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10μA ; I
E
= 0
30
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1mA ; R
BE
=
∞
20
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10μA ; I
C
= 0
3
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10mA ; I
B
= 5mA
0.7
V
I
CBO
Collector Cutoff Current
V
CB
= 15V; I
E
= 0
0.5
μA
h
FE
DC Current Gain
I
C
= 5mA ; V
CE
= 10V
30
200
f
T
Current-Gain—Bandwidth Product
I
C
= 5mA ; V
CE
= 10V
1400
2200
MHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
1.0
pF
CG
Conversion Gain
I
C
= 2mA ; V
CC
= 12V;f= 200MHz
f
OSC
= 230MHz(0dBm)
I
C
= 2mA ; V
CC
= 12V;f= 900MHz
f
OSC
= 930MHz(0dBm)
f
out
= 30MHz
I
C
= 2mA ; V
CC
= 12V;f= 200MHz
f
OSC
= 230MHz(0dBm)
22.5
dB
CG
Conversion Gain
10
dB
NF
Noise Figure
4.0
dB
V
OSC
Oscillating output voltage
I
C
= 7mA;V
CC
= 12V;f
OSC
= 300MHz
300
mV
V
OSC
Oscillating output voltage
I
C
= 7mA;V
CC
= 12V;f
OSC
= 930MHz
200
mV
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
