INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC2757
DESCRIPTION
·Low
Noise
·High
Current-Gain Bandwidth Product
APPLICATIONS
·Designed
for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.15
W
T
J
Junction Temperature
125
℃
T
stg
Storage Temperature Range
-55~125
℃
isc Website:www.iscsemi.cn