INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC2954
DESCRIPTION
·Low
Noise and High Gain
NF = 2.3 dB TYP. ;
︱
S
21e
︱
2
= 20 dB TYP.
@ f = 200 MHz
NF = 2.4 dB TYP. ;
︱
S
21e
︱
2
= 12.5 dB TYP.
@ f = 500 MHz
APPLICATIONS
·Designed
for low noise wide band amplifier and buffer
amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
35
V
V
CEO
Collector-Emitter Voltage
18
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
0.15
A
P
C
Collector Power Dissipation
@T
C
=25℃
2
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
