Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3042
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage (V
CBO
≥500V)
・Fast
switching speed
・Wide
ASO（Safe Operating Area）
APPLICATIONS
・400V/12A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
100
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
12
25
4
2.5
W
UNIT
V
V
V
A
A
A
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
