Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3153
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage (V
CBO
≥900V)
・Fast
switching speed
・Wide
ASO（Safe Operating Area）
APPLICATIONS
・800V/6A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
CONDITIONS
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
OR
CT
U
VALUE
900
800
7
6
20
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
