INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3150
DESCRIPTION
·High
Breakdown Voltage-
: V
(BR)CBO
= 900V(Min)
·Fast
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
900
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
3
A
I
CM
Collector Current-Peak
10
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
1.5
A
P
C
50
W
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn