INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3264
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= 230V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SA1295
APPLICATIONS
·Designed
for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
230
V
V
CEO
Collector-Emitter Voltage
230
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
17
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
5
A
P
C
200
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn