Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ,I
B
=0
I
C
=1mA ,I
E
=0
I
E
=1mA ,I
C
=0
I
C
=5A; I
B
=0.5A
I
C
=5A; I
B
=0.5A
V
CB
=400V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
10
MIN
400
500
7
TYP.
2SC3306
MAX
UNIT
V
V
V
1.5
2.0
100
1.0
V
V
μA
mA
Switching times
t
r
t
stg
t
f
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
Rise time
Storage time
Fall time
V
CC
=200V; I
C
=5.0A
I
B1
=-I
B2
=0.5A;R
L
=40
Ω
OR
CT
U
1.0
2.5
1.0
μs
μs
μs
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
