INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC3356
DESCRIPTION
·Low
Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP.
@V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
·High
Power Gain
MAG = 13 dB TYP.
@V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed
for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
0.1
A
P
C
0.2
W
T
J
150
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website:www.iscsemi.cn