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2SC3356 参数 Datasheet PDF下载

2SC3356图片预览
型号: 2SC3356
PDF下载: 下载PDF文件 查看货源
内容描述: ISC的硅NPN晶体管RF [isc Silicon NPN RF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 236 K
品牌: ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
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INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC3356
DESCRIPTION
·Low
Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP.
@V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
·High
Power Gain
MAG = 13 dB TYP.
@V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed
for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
0.1
A
P
C
0.2
W
T
J
150
T
stg
Storage Temperature Range
-65~150
isc Website:www.iscsemi.cn