Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3309
DESCRIPTION
・With
TO-220Fa package
・High
collector breakdown voltage
・Excellent
switching times
APPLICATIONS
・Switching
regulators and high voltage
switching applications
・High
speed DC-DC converter application
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-50~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
2
4
0.5
2.0
W
UNIT
V
V
V
A
A
A
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
