Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=5A ;I
B
=0.5A;L=1mH
I
C
=5A ;I
B
=0.5A
I
C
=5A ;I
B
=0.5A
V
CB
=100V; I
E
=0
V
CE
=100V;V
BE(OFF)
=-1.5V
T
a
=125℃
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
40
40
20
MIN
100
TYP.
2SC3568
MAX
UNIT
V
0.6
1.5
10
10
1.0
10
V
V
μA
μA
mA
μA
200
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A ;I
B1
=-I
B2
=0. 5A
V
CC
≈50V;R
L
=10Ω
0.5
1.5
0.5
μs
μs
μs
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
