INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3969
DESCRIPTION
·Low
Collector Saturation Voltage
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
400
V
400
V
7
V
2
A
4
A
20
W
2
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
