INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4138
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·High
Switching Speed
·High
Reliability
APPLICATIONS
·Designed
for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
500
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base voltage
10
V
I
C
Collector Current-Continuous
10
A
I
CM
Collector Current-Peak
20
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
4
A
P
C
80
W
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
