INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4159
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= 160V (Min)
·Large
Current Capacity
·Complement
to Type 2SA1606
APPLICATIONS
·Designed
for high-voltage switching, AF power amplifier,
100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
180
V
V
CEO
Collector-Emitter Voltage
160
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current-Continuous
1.5
A
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
3
A
P
C
15
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
