INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4237
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V(Min)
·Fast
Switching speed
APPLICATIONS
·Color
TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
VALUE
1200
800
7
UNIT
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
I
BM
P
T
T
J
T
stg
w
.cn
i
em
cs
.is
w
w
V
V
10
A
20
4
A
A
8
150
150
-55~150
A
W
℃
℃
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.83
UNIT
℃/W
isc Website:www.iscsemi.cn