INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4250
DESCRIPTION
·High
Conversion Gain-
G
ce
= 25 dB TYP.
·Low
Reverse Transfer Capacitance-
C
re
= 0.45 pF TYP.
APPLICATIONS
·Designed
for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
20
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
50
mA
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
25
mA
P
C
0.1
W
T
J
125
℃
T
stg
Storage Temperature Range
-55~125
℃
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