INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4242
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)
·Fast
Switching Speed
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 0.8V(Max.)@ I
C
= 4.0A
APPLICATIONS
·Designed
for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
400
8
7
14
2
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
3.125
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
