INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5242
DESCRIPTION
·High
Collector Breakdown Voltage-
: V
(BR)CEO
= 230V(Min.)
·Good
Linearity of h
FE
·Complement
to Type 2SA1962
APPLICATIONS
·Power
amplifier applications
·Recommend
for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
230
V
230
V
5
V
15
A
1.5
A
130
W
150
℃
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
