Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5296
DESCRIPTION
・With
TO-3PML package
・High
breakdown voltage, high reliability
.
・High
speed
・Built
in damper diode
APPLICATIONS
・Ultrahigh-definition
CRT display
・Horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
8
16
60
W
UNIT
V
V
V
A
A