INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5387
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1200V (Min)
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Horizontal
deflection output for high resolution display,
color TV.
·High
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1200
V
V
CEO
Collector-Emitter Voltage
600
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current- Continuous
10
A
I
CM
Collector Current- Pulse
20
A
I
B
B
Base Current- Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
5
A
P
C
50
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
