INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1133
DESCRIPTION
·Collector
Current: I
C
= 4A
·Low
Collector Saturation Voltage
: V
CE(sat)
= 1.0V(Max)@I
C
= 2A
·High
Collector Power Dissipation
·Complement
to Type 2SB857
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
4
A
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
8
A
P
C
40
W
T
J
150
℃
T
stg
Storage Temperature Range
-45~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
