Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1138
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB861
APPLICATIONS
·Low
frequency high voltage power
amplifier TV vertical deflection output
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-45~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
150
6
2
5
1.8
W
UNIT
V
V
V
A
A