Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1264 2SD1264A
DESCRIPTION
·With
TO-220Fa package
·Complement
to type 2SB940/940A
·High
collector to emitter voltage V
CEO
·Large
collector power dissipation P
C
APPLICATIONS
·For
power amplification
·For
TV vertical deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SD1264
V
CEO
Collector-emitter voltage
2SD1264A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
Open collector
Open base
180
6
2
3
2
W
V
A
A
CONDITIONS
Open emitter
VALUE
200
150
V
UNIT
V
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
