INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1266
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 1.2V(Max)@ I
C
= 3A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V (Min)
·Good
Linearity of h
FE
·Complement
to Type 2SB941
APPLICATIONS
·Designed
for power amplification.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
3
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
5
A
35
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
