Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1267 2SD1267A
DESCRIPTION
・With
TO-220Fa package
・High
forward current transfer ratio h
FE
which has satisfactory linearity
・Low
collector saturation voltage
・Complement
to type 2SB942/942A
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
V
CEO
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
CONDITIONS
2SD1267
Collector-base voltage
Open emitter
2SD1267A
2SD1267
Collector-emitter voltage
Open base
2SD1267A
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
Open collector
OR
CT
U
VALUE
60
V
80
60
V
80
5
4
8
2
W
40
150
-55~150
℃
℃
V
A
A
UNIT
V
EBO
I
C
I
CM
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
