Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1275 2SD1275A
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB949/949A
・High
DC current gain
・High-speed
switching
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
V
CEO
导�½�
半
ND
固��
ICO
SEM
GE
HAN
INC
CONDITIONS
2SD1275
Collector-base voltage
Open emitter
2SD1275A
Collector-emitter
voltage
2SD1275
Open base
2SD1275A
Open collector
Emitter-base voltage
Collector current
Collector current-Peak
T
C
=25℃
OR
CT
U
VALUE
60
80
60
UNIT
V
V
80
5
2
4
35
W
2
150
-55~150
℃
℃
V
A
A
V
EBO
I
C
I
CM
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
