Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1271 2SD1271A
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB946/946A
・Low
collector saturation voltage
・Good
linearity of h
FE
・Large
collector current I
C
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
・
ABSOLUTE MAXIMUM RATINGS AT Ta=25
℃
SYMBOL
PARAMETER
2SD1271
2SD1271A
V
CEO
Collector-emitter voltage
2SD1271
2SD1271A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open collector
Open base
100
7
7
15
40
w
V
A
A
CONDITIONS
VALUE
130
Open emitter
150
80
V
V
UNIT
V
CBO
Collector-base voltage
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
