Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
V
F
PARAMETER
Collector- emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Diode forward voltage
CONDITIONS
I
C
=100mA; R
BE
=∞
I
C
=5mA; I
E
=0
I
E
=200mA; I
C
=0
I
C
=2.5A; I
B
=0.8A
I
C
=2.5A; I
B
=0.8A
V
CB
=800V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
I
EC
=3.5A
40
8
MIN
800
1500
7
2SD1397
TYP.
MAX
UNIT
V
V
V
8.0
1.5
10
130
V
V
μA
mA
3
2.0
MHz
V
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
