Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1402
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
800
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=1mA; I
C
=0
I
C
=4A; I
B
=0.8A
6
V
Collector-emitter saturation voltage
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=4A; I
B
=0.8A
1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=800V; I
E
=0
10
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
10
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
3
MHz
2