Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1428
DESCRIPTION
·With
TO-3P(H)1S package
·Built-in
damper diode
·High
voltage ,high speed
·Low
collector saturation voltage
APPLICATIONS
·Designed
for use in color TV horizontal
output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
6
-6
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
