Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1506
DESCRIPTION
·With
TO-126 package
·Complement
to type 2SB1065
·Low
collector saturation voltage
APPLICATIONS
·For
use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.2
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
50
5
3
4.5
10
W
UNIT
V
V
V
A
A