Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1555
DESCRIPTION
・With
TO-3P(H)IS package
・Built-in
damper diode
・High
voltage ,high speed
・Low
collector saturation voltage
APPLICATIONS
・For
color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
5
2.5
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃