Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220F package
·Complement
to type 2SB1274
·High
reliability.
·High
breakdown voltage
·Low
saturation voltage.
·Wide
area of safe operation
APPLICATIONS
·60V/3A
low-frequency power amplifier
·General
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1913
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector dissipation
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
6
3
8
20
W
UNIT
V
V
V
A
A
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
