Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2012
DESCRIPTION
·With
TO-220F package
·Complement
to type 2SB1366
·Low
collector saturation voltage
·Collector
power dissipation:
P
C
=25W(T
C
=25
℃
)
APPLICATIONS
·Audio
frequency power amplifier and
general purpose switching applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220F) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
7
3
0.5
2.0
W
UNIT
V
V
V
A
A