Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2025
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
100
100
TYP.
MAX
UNIT
V
IC=5mA; IB=0
IC=50μA; IE=0
IC=3A ;IB=6mA
V
1.5
10
V
VCB=100V; IE=0
VEB=5V; IC=0
μA
mA
IEBO
3.0
hFE
DC current gain
IC=2A ; VCE=3V
IC=0.2A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
1000
20000
fT
Transition frequency
40
50
MHz
pF
COB
Output capacitance
2
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