INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD2583
DESCRIPTION
·High
Collector Current-I
C
=
5A
·Low
Saturation Voltage -
: V
CE(sat)
= 0.15V(Max)@ I
C
=
1A, I
B
=
50mA
·High
DC Current Gain-
: h
FE
= 150~600@ I
C
= 1A
APPLICATIONS
·Designed
for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
30
30
6
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
5.0
10
2.0
1.0
A
A
A
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
Storage Temperature Range
10
W
150
-55~150
℃
℃
T
stg
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
