Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2553
DESCRIPTION
・With
TO-3P(H)IS package
・High
voltage;high speed
・Low
saturation voltage
・Bult-in
damper diode
APPLICATIONS
・Horizontal
deflection output for high
resolution display,color TV
・High
speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1700
600
5
8
16
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃