Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD553
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB553
·Low
collector saturation voltage
APPLICATIONS
·High
current switching applications
·Power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
Open emitter
Open base
CONDITIONS
VALUE
70
50
5
7
1
40
UNIT
V
V
V
A
A
Open collector
P
C
Collector power dissipation
T
a
=25℃
1.5
150
-50~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃