Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB673/675
·DARLINGTON
·High
DC current gain
·Low
saturation voltage
APPLICATIONS
·High
power switching
·Hammer
drive,pulse motor drive
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SD633
V
CBO
Collector-base voltage
2SD635
2SD633
V
CEO
Collector-emitter voltage
2SD635
V
EBO
I
C
I
B
B
CONDITIONS
VALUE
100
UNIT
Open emitter
60
100
Open base
60
Open collector
5
7
0.7
T
C
=25℃
40
150
-50~150
V
V
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
V
A
A
W
℃
℃
P
C
T
j
T
stg
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
