Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・High
DC current gain
・DARLINGTON
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・Electronic
ignitor
・Relay
and solenoid drivers
・Switching
regulators
・Motor
controls
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
DESCRIPTION
2SD834
Fig.1 simplified outline (TO-220) and symbol
Emitter
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Open base
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
180
10
4
0.3
25
150
-55~150
V
A
A
W
℃
℃
Open emitter
CONDITIONS
VALUE
250
200
V
UNIT
V
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
