Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD880
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB834
·Low
collector saturation voltage
APPLICATIONS
·Designed
for use in audio frequency
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
CONDITIONS
VALUE
60
60
7
3
6
0.5
30
150
-50~150
UNIT
V
V
V
A
A
A
W
℃
℃
Open collector
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
4.16
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
