Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD233/235 /237
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD234 BD236 BD238
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
BD234
BD236
Collector-base voltage
V
CEO
Collector-emitter voltage
HAN
C
ES
G
BD238
BD234
BD236
BD238
Open emitter
ND
ICO
EM
OR
UCT
VALUE
-45
-60
-100
-45
-60
-80
UNIT
V
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
Open collector
-5
-2
-6
V
A
A
W
℃
℃
T
C
=25℃
25
150
-65~150
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
