Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD241/A/B/C
DESCRIPTION
・With
TO-220C package
・Complement
to type BD242/A/B/C
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
PARAMETER
BD241
BD241A
V
CBO
Collector-base voltage
BD241B
BD241C
BD241
BD241A
V
CEO
Collector-emitter voltage
BD241B
BD241C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
100
5
3
5
1
40
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
90
115
45
60
V
CONDITIONS
VALUE
55
70
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
