Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD244/A/B/C
DESCRIPTION
·With
TO-220C package
·Complement
to type BD243/A/B/C
APPLICATIONS
·For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
PARAMETER
BD244
BD244A
V
CBO
Collector-base voltage
BD244B
BD244C
BD244
BD244A
V
CEO
Collector-emitter voltage
BD244B
BD244C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-100
-5
-6
-10
-2
65
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
-80
-100
-45
-60
V
CONDITIONS
VALUE
-45
-60
V
UNIT