Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD250/A/B/C
DESCRIPTION
・With
TO-3PN package
・Complement
to type BD249/A/B/C
・125
W at 25°C case temperature
・25
A continuous collector current
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
IN
Collector-base voltage
导�½�
半
PARAMETER
CONDITIONS
VALUE
-55
UNIT
BD246
BD246A
BD246B
Collector emitter
V
CEO
Collector-emitter voltage
HAN
C
ES
G
BD246
BD246A
BD246B
BD246C
BD246C
ND
ICO
EM
OR
UCT
-70
-90
-115
-45
-60
-80
-100
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
-5
-25
-40
-5
V
A
A
A
W
℃
℃
T
C
=25℃
125
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
