Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD433/435/437
DESCRIPTION
・With
TO-126 package
・Complement
to type BD434/436/438
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD433
V
CBO
Collector-base voltage
BD435
BD437
BD433
V
CEO
Collector-emitter voltage
BD435
BD437
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
22
32
45
22
32
45
5
4
7
1
36
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
